Title of article :
First-principles predictions on transition from tetrahedron to octahedron, electronic structures and elastic properties of InAs
Original Research Article
Author/Authors :
Hu Chenghua، نويسنده , , Wang Feng، نويسنده , , Xia Chuanhui، نويسنده , , Zhou Ping، نويسنده , , Shi Lingna، نويسنده , , Zhou Mu، نويسنده , , Zheng Zhou، نويسنده , , Liang Jianghua، نويسنده , , Zhou Xiaoshong، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2012
Abstract :
In this work, the pressure induced phase transition of InAs is investigated by density functional theory. The first-order phase transition of InAs from zinc-blende (ZB) to the rocksalt (RS) structure occurs at 4.9 GPa accompanies by a 26% volume collapse. It is found that the nearest In and As atoms bonded as covalent bond, but there is no strong interaction between the nearest In–In or As–As atoms. Crystal space of ZB structure is occupied by tetrahedrons (4 In–As covalent bonds) partly with many interstice, and crystal space of RS is fulfilled by close-packed octahedrons (6 In–As covalent bonds). With increasing pressure, rebuild of covalent bond due to variations of electronic structure causes phase transition from ZB to RS structure. Furthermore, directional changes of covalent bond along [100] and [110] bring evident variation of shear on the {100} and {110} planes.
Keywords :
C. ab initio calculations , D. Phase transition , D. Electrical properties , A. Semiconductors , D. Elastic properties
Journal title :
Journal of Physics and Chemistry of Solids
Journal title :
Journal of Physics and Chemistry of Solids