Title of article
Optical bandgap and electrical conductivity studies on near stoichiometric LiNbO3 crystals prepared by VTE process Original Research Article
Author/Authors
Rajeev Bhatt، نويسنده , , S. Ganesamoorthy، نويسنده , , Indranil Bhaumik، نويسنده , , A.K. Karnal، نويسنده , , M Prasad and PK Gupta ، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2012
Pages
5
From page
257
To page
261
Abstract
Vapour transport equilibrium (VTE) technique was used to prepare near stoichiometric LiNbO3 (NSLN) crystals. Simultaneous occurrence of reduction has been observed during the Li-enrichment that results in the weak absorption bands centred at 1.7, 2.6 and 3.7 eV in the absorption spectrum. Annealing in oxygen atmosphere resulted in decrease in the intensity of these bands. The indirect and direct band-gap energies for NSLN crystals evaluated from absorption studies are reported. The energy of the phonon involved in the indirect transition is ∼85 meV (685 cm−1). Near room temperature ac-conductivity measurements reveal lower conductivity for oxygen annealed NSLN crystal in comparison to as prepared NSLN and CLN specimens. The activation energies for ac-conductivity along the z-direction for NSLN and CLN crystals in the temperature range 500–1100 K are 1.03 eV and 0.96 eV, respectively.
Keywords
A. Optical materials , B. Crystal Growth , D. Defects , D. Electrical properties , D. Optical properties
Journal title
Journal of Physics and Chemistry of Solids
Serial Year
2012
Journal title
Journal of Physics and Chemistry of Solids
Record number
1311559
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