Title of article :
Theoretical investigations of NiTiSn and CoVSn compounds Review Article
Author/Authors :
M. Hichour، نويسنده , , D. Rached، نويسنده , , R. Khenata d، نويسنده , , Maher M. Rabah، نويسنده , , M. Merabet، نويسنده , , ALI H. RESHAK، نويسنده , , S. Bin Omran، نويسنده , , R. Ahmed، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2012
Pages :
7
From page :
975
To page :
981
Abstract :
The structural, elastic and electronic properties of NiTiSn and CoVSn half-Heusler compounds have been calculated using the full-potential linear muffin-tin orbital (FP-LMTO) method. The computed equilibrium lattice constants are in excellent agreement with the available experimental and theoretical data. The elastic constants Cij are calculated using the total energy variation with strain technique. The polycrystalline elastic moduli (namely: the shear modulus, Youngʹs modulus, Poissonʹs ratio, Laméʹs coefficients, sound velocities and the Debye temperature) were derived from the obtained single-crystal elastic constants. The ductility mechanism for the studied compounds is discussed via the elastic constants Cij and their related parameters. The electronic band structure calculations show that the conduction band minimum (CBM) is located at the X point for both compounds, whereas the valence band maximum (VBM) is located at the Г point for NiTiSn and at the L point for CoVSn, resulting in indirect energy band gaps of 0.46 and 0.75 eV for NiTiSn and CoVSn, respectively. The pressure and volume dependences of the energy band gaps have been calculated.
Keywords :
C. ab initio calculations , D. Electronic structure
Journal title :
Journal of Physics and Chemistry of Solids
Serial Year :
2012
Journal title :
Journal of Physics and Chemistry of Solids
Record number :
1311683
Link To Document :
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