Title of article :
Lattice dynamics properties of XAs (X=Al, Ga and In) with zinc-blende structure from first-principle calculations Original Research Article
Author/Authors :
Xingxiu Li، نويسنده , , Xiaoma Tao، نويسنده , , Ran Li، نويسنده , , Hongmei Chen، نويسنده , , Yifang Ouyang، نويسنده , , Yong Du، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2012
Pages :
6
From page :
1034
To page :
1039
Abstract :
Band structures, density of states, dielectric and vibrational properties of XAs (X=Al, Ga and In) alloys with zinc-blende structure have been studied using the density functional theory (DFT). The calculated lattice constants, band gap, static dielectric constants and phonon frequencies are all in good agreement with the available experimental data and other theoretical results. The calculated results show that Born effective charges ZB increase with cation mass. A similar tendency has been observed for phonon frequencies ωTO and ωLO. Calculation results prove that static dielectric constants ε(0) increase with atomic weight, i.e. in the sequences AlAs–GaAs–InAs, and show an inverse sequence for band gap.
Keywords :
C. ab initio calculations , D. Electronic structure , D. Dielectric properties , D. lattice dynamics , A. Semiconductors
Journal title :
Journal of Physics and Chemistry of Solids
Serial Year :
2012
Journal title :
Journal of Physics and Chemistry of Solids
Record number :
1311692
Link To Document :
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