Title of article :
Doping level influence on chemical surface of diamond electrodes Original Research Article
Author/Authors :
A.F. Azevedo، نويسنده , , M.R. Baldan، نويسنده , , N.G. Ferreira، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2013
Pages :
6
From page :
599
To page :
604
Abstract :
The modification of surface bond termination promoted by the doping level on diamond electrodes is analyzed. The films were prepared by hot filament chemical vapor deposition technique using the standard mixture of H2/CH4 with an extra H2 flux passing through a bubbler containing different concentrations of B2O3 dissolved in methanol. Diamond morphology and quality were characterized by scanning electron microscopy and Raman scattering spectroscopy techniques while the changes in film surfaces were analyzed by contact angle, cyclic voltammetry and synchrotron X-ray photoelectron spectroscopy (XPS). The boron-doped diamond (BDD) films hydrophobicity, reversibility, and work potential window characteristics were related to their physical properties and chemical surface, as a function of the doping level. From the Mott–Schottky plots (MSP) and XPS analyzes, for the lightly (1018 cm−3) and highly (1020 cm−3) BDD films, the relationship between the BDD electrochemical responses and their surface bond terminations is discussed.
Keywords :
A. Semiconductors , C. Raman spectroscopy , D. Electrochemical properties , D. Surface properties
Journal title :
Journal of Physics and Chemistry of Solids
Serial Year :
2013
Journal title :
Journal of Physics and Chemistry of Solids
Record number :
1311891
Link To Document :
بازگشت