Title of article
Synthesis and structure of a hafnium silylamide complex and the chemical vapor deposition of HfxSi1−xO2 films
Author/Authors
Edixa de L. Jiménez، نويسنده , , Saba Javed، نويسنده , , David M. Hoffman، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2009
Pages
4
From page
385
To page
388
Abstract
The complex Hf[N(SiMe2H)2]4 was synthesized, structurally characterized, and used as a precursor with oxygen to prepare hafnium silicate thin films at substrate temperatures ⩾500 °C in a low-pressure CVD process. The as-deposited films were amorphous, and they remained amorphous upon annealing up to 1100 °C.
Keywords
Hafnium complex , Silylamide complex , MOCVD , X-ray crystal structure , Silicon-29 NMR
Journal title
INORGANICA CHIMICA ACTA
Serial Year
2009
Journal title
INORGANICA CHIMICA ACTA
Record number
1326653
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