Title of article :
Thermal stability of high surface area silicon carbide materials
Author/Authors :
Piotr Krawiec، نويسنده , , Stefan Kaskel، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Pages :
9
From page :
2281
To page :
2289
Abstract :
The synthesis of mesoporous silicon carbide by chemical vapor infiltration of dimethyl dichlorosilane into mesoporous silica SBA-15 and subsequent dissolution of the silica matrix with HF was investigated. The influence of the synthesis parameters of the composite material (SiC/SBA-15) on the final product (mesoporous SiC) was determined. Depending on the preparation conditions, materials with specific surface areas from 410 to 830 m2 g−1 and pore sizes between 2 and 10 nm with high mesopore volume (0.31–0.96 cm3 g−1) were prepared. Additionally, the thermal stability of mesoporous silicon carbide at 1573 K in an inert atmosphere (argon) was investigated, and compared to that of SBA-15 and ordered mesoporous carbon (CMK-1). Mesoporous SiC has a much higher thermal textural stability as compared to SBA-15, but a lower stability than ordered mesoporous carbon CMK-1.
Keywords :
Silicon carbide , Mesoporous materials , High surface area
Journal title :
JOURNAL OF SOLID STATE CHEMISTRY
Serial Year :
2006
Journal title :
JOURNAL OF SOLID STATE CHEMISTRY
Record number :
1331622
Link To Document :
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