Author/Authors :
Ana Gonzalez-Flores، نويسنده , , Diego and Patil، نويسنده , , Siddappa A. and Medina، نويسنده , , Phillip A. and Dever، نويسنده , , Seth and Uthaisar، نويسنده , , Chananate and Pineda، نويسنده , , Leslie W. and Montero، نويسنده , , Mavis L. and Ziller، نويسنده , , Joseph W. and Fahlman، نويسنده , , Bradley D.، نويسنده ,
Abstract :
An amine-elimination pathway has been used to produce two new hafnium compounds starting from the tetrakis(dimethylamido)hafnium(IV) complex and an amine – bis[(Z)-4-(2,6-dimethylphenylamino)pent-3-en-2-one]bis(dimethylamido)hafnium(IV) and [(Z)-4-(4-methylphenylamino)pent-3-en-2-one]bis(dimethylamido)hafnium(IV). The resulting complexes were characterized by single crystal X-ray diffraction and NMR. In addition, their volatilities were studied by thermogravimetric analysis (TGA), where [(Z)-4-(4-methylphenylamino)pent-3-en-2-one]bis(dimethylamido)hafnium(IV) showed better properties for MOCVD applications with a ΔHsub of 27 kJ/mol and a Tsub of 104 °C.
Keywords :
Volatility , Sublimation enthalpy , thermogravimetric analysis (TGA) , High-? dielectric , Metal–organic chemical vapor deposition (MOCVD) , Hafnium compounds
