Ferroelectric and dielectric properties of image thin films grown by the soft chemical method

Polycrystalline image (BST:Sn) thin films with a perovskite structure were prepared by the soft chemical method on a platinum-coated silicon substrate from spin-coating technique. The resulting thin films showed a dense structure with uniform grain size distribution. The dielectric constant of the films estimated from image curve is around 1134 and can be ascribed to a reduction in the oxygen vacancy concentration. The ferroelectric nature of the film indicated by butterfly-shaped image curves and confirmed by the hysteresis curve, showed remnant polarization of image and coercive field of 74 kV/cm at frequency of 1 MHz. At the same frequency, the leakage current density at 1.0 V is equal to image. This work clearly reveals the highly promising potential of BST:Sn for application in memory devices.