Title of article :
Partial charge ordering in the mixed-valent compound image
Author/Authors :
H. Mizoguchi، نويسنده , , W.J. Marshall، نويسنده , , A.P. Ramirez، نويسنده , , A.W. Sleight، نويسنده , , M.A. Subramanian and G. Campet، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2007
Pages :
6
From page :
3463
To page :
3468
Abstract :
Crystals of the mixed-valent compound image were grown from a flux. The room temperature conductivity of a crystal was 3 S/cm but decreased smoothly with decreasing temperature to 10−5 S/cm at 25 K. Magnetic susceptibility data indicate a localized moment for Rh4+. A Seebeck coefficient at 200 K of +280 μV/K further confirms that this compound is a semiconductor rather than a metal with a partially filled 4d t2g band. A structure refinement based on single crystal X-ray diffraction data obtained at 173 and 296 K provided Rh–O distances sufficiently accurate to indicate the nature of the charge ordering between Rh3+ and Rh4+. The large Seebeck coefficient coupled with the high electrical conductivity indicates that this may be a promising low-temperature thermoelectric material.
Keywords :
Charge ordering , Bismuth , Seebeck coefficient , Electrical properties , Rhodium oxide
Journal title :
JOURNAL OF SOLID STATE CHEMISTRY
Serial Year :
2007
Journal title :
JOURNAL OF SOLID STATE CHEMISTRY
Record number :
1332937
Link To Document :
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