Title of article
Electronic structures and optical properties of wurtzite type LiBSe2 (B=Al, Ga, In): A first-principles study
Author/Authors
Long-Hua Li، نويسنده , , Jun-Qian Li، نويسنده , , Liming Wu، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2008
Pages
7
From page
2462
To page
2468
Abstract
The electronic structures of three wurtzite type isostructural compounds LiBSe2 (B=Al, Ga, In) are studied by the density functional theory (DFT). The results reveal that the presence of Li cations has direct influence on neither the band gaps (Eg) nor the bonding levels, but plays an important role in the stabilization of the structures. The band structures and densities of states (DOS) are analyzed in detail, and the band gaps of LiBSe2 adhere to the following trend Eg(LiAlSe2)>Eg(LiGaSe2)>Eg(LiInSe2), which is in agreement with the decrease of the bond energy of the corresponding Se 4p–B s antibonding orbitals. The role of the active s electrons of B element on the band gaps is also discussed. Finally, the optical properties are predicted, and the results would be a guide to understand the experiments.
Keywords
Wurtzite type selenides , Band gap , DFT , Electronic structure
Journal title
JOURNAL OF SOLID STATE CHEMISTRY
Serial Year
2008
Journal title
JOURNAL OF SOLID STATE CHEMISTRY
Record number
1333421
Link To Document