Title of article :
Syntheses, crystal structures, and characterization of As(III) and As(V) thioarsenates, [Mn2(phen)(AsIII2S5)]n and [Mn3(phen)3(AsvS4)2]n·nH2O
Author/Authors :
Xin Wang، نويسنده , , Tianlu Sheng، نويسنده , , Sheng-Min Hu، نويسنده , , Rui-Biao Fu، نويسنده , , Jian-Shan Chen، نويسنده , , Xintao Wu، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2009
Abstract :
The hydrothermal reactions of As, Mn, S, phen (phen=1,10-phenanthroline), and en (en=ethylenediamine) yield two manganese As(III) and As(V) thioarsenates, [Mn2(phen)(AsIII2S5)]n (1) and [Mn3(phen)3(AsVS4)2]n·nH2O (2), respectively. Single-crystal X-ray diffraction analyses reveal that compound 1 is a two-dimensional (2D) layer of (6,3) topology. The 18-membered rings within the 2D porous layers are formed by corner-, edge-, and face-sharing cubane-like [Mn2As2S4] units along the [100] direction. Whereas compound 2 is a one-dimensional (1D) chain structure. They are both characterized by IR, elemental analysis, EDS, and X-ray powder diffraction. The thermogravimetric analysis of 1 and 2 are discussed. Both the compounds are semiconductors with the band gap of Eg (compound 1)=2.01 eV (617 nm) and Eg (compound 2)=1.97 eV (629 nm), respectively. In addition, the variable-temperature magnetic susceptibility data suggest weak antiferromagnetic interactions between the Mn2+ ions in these two compounds.
Keywords :
Semiconductor , manganese , Thioarsenate(III) , Multiple physical properties , Thermoanalysis , Magnetism
Journal title :
JOURNAL OF SOLID STATE CHEMISTRY
Journal title :
JOURNAL OF SOLID STATE CHEMISTRY