• Title of article

    Ionic diffusion mastering using crystal-chemistry parameters: τ-Cu1/2Ag1/2V2O5 structure determination and comparison with refined δ-AgxV2O5 and ε-CuxV2O5 ones

  • Author/Authors

    P. Rozier، نويسنده , , M. Dollé، نويسنده , , J. Galy، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2009
  • Pages
    11
  • From page
    1481
  • To page
    1491
  • Abstract
    τ-Ag1/2Cu1/2V2O5 compound crystallises in the monoclinic system space group C2/m with cell parameters a=11.757(4) Å, b=3.6942(5) Å, c=9.463(2) Å, and β=114.62(2)°. The structure is build up with V4O10 D4 double layer. The silver and copper ions are located in two different oxygenated tunnels. Examination of electronic density maps shows that while the silver ions are located in defined crystallographic sites, the copper ones are fully delocalised over the whole tunnel. Comparison with δ-AgxV2O5 and ε-CuxV2O5 refined structure allows to define crystal chemistry parameters governing the ionic delocalisation and give clues to predict from structural consideration the expected electrical behaviour with the aim to make possible a structural design to enhance guest species reactivity.
  • Keywords
    Crystal-chemistry , Ionic diffusion , Structure determination , Vanadium oxide
  • Journal title
    JOURNAL OF SOLID STATE CHEMISTRY
  • Serial Year
    2009
  • Journal title
    JOURNAL OF SOLID STATE CHEMISTRY
  • Record number

    1333865