Title of article
High-pressure crystal growth and magnetic and electrical properties of the quasi-one dimensional osmium oxide Na2OsO4
Author/Authors
Y.G. Shi، نويسنده , , Y.F. Guo، نويسنده , , S. Yu، نويسنده , , M. Arai، نويسنده , , A.A. Belik، نويسنده , , A. Sato، نويسنده , , K. YAMAURA، نويسنده , , E. Takayama-Muromachi، نويسنده , , T. Varga، نويسنده , , J.F. Mitchell، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2010
Pages
6
From page
402
To page
407
Abstract
Na2OsO4 crystals were grown by a NaCl flux method under high pressure. It crystallizes in the Ca2IrO4-type structure without having additional elements or metal vacancies, which are usually accommodated. It appears that Na2OsO4 is a metal-stoichiometric Ca2IrO4-type compound never been synthesized to date. Na2OsO4 has the octahedral environment of Os6+O6 so that the electronic configuration is 5d 2, suggesting the magnetic S =1 ground state. However, magnetization, electrical resistivity, and specific heat measurements indicated that the non-magnetic S =0 state is much likely for Na2OsO4 than the S =1 state. Band structure calculations and the structure analysis found that the disagreement is probably due to the statically uniaxial compression of the OsO6 octahedra, resulting in splitting of the t2g
Keywords
Ca2IrO4 , High pressure synthesis , Osmium oxides
Journal title
JOURNAL OF SOLID STATE CHEMISTRY
Serial Year
2010
Journal title
JOURNAL OF SOLID STATE CHEMISTRY
Record number
1334323
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