Author/Authors :
X.T. Li، نويسنده , , P.Y. Du، نويسنده , , Y.L. Zhao، نويسنده , , Y. Tu، نويسنده , , J.L. Dai، نويسنده , , W.J. Weng، نويسنده , , G.R. Han، نويسنده , , C.L. Song، نويسنده ,
Abstract :
Pb0.4Sr0.6TiO3 (PST) thin films doped with various concentration of Bi were prepared by a sol–gel method. The phase status, surface morphology and dielectric properties of these thin films were measured by X-ray diffraction (XRD), scanning electron microscopy (SEM) and impedance analyzer, respectively. Results showed that the thin films with the maximum dielectric constant and minimum dielectric loss were obtained for x=0.15. For x<0.15, only pure PST perovskite phase were in the thin films. For 0.2
Keywords :
Thin films , PST , Sol–gel processes , Biphase , Dielectric properties
Journal title :
JOURNAL OF SOLID STATE CHEMISTRY
Journal title :
JOURNAL OF SOLID STATE CHEMISTRY