Title of article
Investigation and application of quantitative relationship between sp energy levels of Bi3+ ion and host lattice
Author/Authors
Lili Wang، نويسنده , , Qiang Sun، نويسنده , , Qingzhi Liu، نويسنده , , Jinsheng Shi، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2012
Pages
5
From page
142
To page
146
Abstract
Information on 1S0-3P1 (A band) and 1S0-1P1 (C band) transition energy of Bi3+ ion in dozens of different compounds has been gathered and analyzed. With the use of the dielectric theory of the chemical bond for complex crystals, relationships between A and C absorption band and environmental factor he were established: EA=2.972+6.206exp (−he/0.551); EC=3.236+10.924exp (−he/0.644). For Bi3+ doped hosts with known structure and refractive index, it is possible to predict Bi3+ energy level position with an good accuracy of typically ±0.51 eV using the two relationships. Moreover, a direct relationship between A and C band was deduced: EC=3.236+2.290(EA−2.972)0.856. Thus a very simple method to predict C band position was proposed. This work will be of great help to understand spectroscopy of Bi3+ and will be useful for developing new PDP, LED and mercury-free fluorescent lamp phosphors.
Keywords
A absorption band , Bi3+ , C absorption band , Prediction
Journal title
JOURNAL OF SOLID STATE CHEMISTRY
Serial Year
2012
Journal title
JOURNAL OF SOLID STATE CHEMISTRY
Record number
1340584
Link To Document