Effect of partial damage efficiencies on the radiation-induced segregation in binary alloys

A model of the radiation-induced segregation (RIS) in irradiated binary alloys, which takes into account the effect of the partial damage efficiencies is presented. Based on the model, the kinetics of RIS is investigated analytically and numerically. It is shown that no segregation exists when more intensive partial generation of point defects is compensated by corresponding greater diffusivity of the alloy component resulting in more intensive recombination on defect sinks. A simple criterion of the reversal of the RIS at the sample surface is obtained in terms of a critical temperature depending on the parameters related to the defect mobilities and partial damage efficiencies.