Author/Authors :
Guilbert، نويسنده , , S and Sauvage، نويسنده , , H. Erramli، نويسنده , , H and Barthe، نويسنده , , M.-F and Desgardin، نويسنده , , P and Blondiaux، نويسنده , , G and Corbel، نويسنده , , C and Piron، نويسنده , , J.P، نويسنده ,
Abstract :
The behavior of helium implanted in sintered uranium dioxide disks has been investigated as a function of annealing temperature. UO2 disks have been implanted with 1 MeV 3He at a nominal fluence of 5 × 1016 3He cm−2 using a Van de Graaff accelerator. The 3He(d,α)1H nuclear reaction analysis method was used to determine the helium depth profile in the UO2 disks. Partial flaking was observed after annealing at 500 °C for local He concentration of 1 at.%. After annealing at 600 °C flaking has affected the whole surface. The formation of helium bubbles is discussed.
