Impedance measurements of thin film ceramics under ion beam irradiation

High-purity alumina films were made by a laser ablation method, and its impedance was measured under ion beam irradiation. Change of radiation induced conductivity per the dose rate under ion beam irradiation was a few orders of magnitude lower than that under gamma-ray irradiation. Pulsed X-ray irradiation experiments were performed to determine the lifetime of the charge carrier in the crystalline alumina. The carrier lifetime was ∼10−7 s and the mobility of the charge carriers responsible for RIC in the crystalline alumina was estimated to be ∼10−5 m2/V/s.