Title of article
Dislocation–stacking fault tetrahedron interaction: what can we learn from atomic-scale modelling
Author/Authors
Osetsky، نويسنده , , Yu.N and Stoller، نويسنده , , R.E and Matsukawa، نويسنده , , Y، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
5
From page
1228
To page
1232
Abstract
The high number density of stacking fault tetrahedra (SFTs) observed in irradiated fcc metals suggests that they should contribute to radiation-induced hardening and, therefore, taken into account when estimating mechanical properties changes of irradiated materials. The central issue is describing the individual interaction between a moving dislocation and an SFT, which is characterized by a very fine size scale, ∼100 nm. This scale is amenable to both in situ TEM experiments and large-scale atomic modelling. In this paper we present results of an atomistic simulation of dislocation–SFT interactions using molecular dynamics (MD). The results are compared with observations from in situ deformation experiments. It is demonstrated that in some cases the simulations and experimental observations are quite similar, suggesting a reasonable interpretation of experimental observations.
Journal title
Journal of Nuclear Materials
Serial Year
2004
Journal title
Journal of Nuclear Materials
Record number
1359088
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