Author/Authors :
Zhuo، نويسنده , , M.J. and Uberuaga، نويسنده , , B.P. and Yan، نويسنده , , L. and Fu، نويسنده , , E.G. and Dickerson، نويسنده , , R.M. and Wang، نويسنده , , Y.Q. and Misra، نويسنده , , A. and Nastasi، نويسنده , , M. and Jia، نويسنده , , Q.X.، نويسنده ,
Abstract :
Epitaxial anatase TiO 2 films with thickness of around 300 nm were deposited on SrTiO 3 and irradiated with 250 keV Ne ions at room temperature. X-ray diffraction, Rutherford backscattering spectrometry, and transmission electron microscopy were used to characterize the microstructural changes under irradiation. Two primary features are observed in the irradiated material: a damaged layer with a high density of nano-sized defects including dislocation loops was observed in the TiO 2 film and, near the TiO 2 / SrTiO 3 interface, a defect denuded zone formed on the TiO 2 side while an amorphous layer formed on the SrTiO 3 side. Atomistic calculations attribute the formation of both the defect-denuded zone and the interfacial amorphous layer not to the interaction between the irradiation induced defects and the TiO 2 / SrTiO 3 hetero-interface but rather differences in chemical potential and mobilities for defects in each of the two phases.