Diffusion bonding between W and EUROFER97 using V interlayer

Diffusion bonding is selected to join W to EUROFER97 for the manufacturing of some components in the fusion technology. A direct bonding does not seem feasible due to the high interfacial residual stress induced by the large mismatch of the coefficient of thermal expansions of both materials to be bonded. To reduce the residual stress, a V plate with a thickness of 1 mm was introduced as an interlayer. The diffusion bonding was conducted at 1050 °C for 1 h. The uniaxial applied compression stress was calculated considering the 5% allowable creep deformation on the EUROFER97’s side. Investigations on bonded specimens showed defect free interfaces. Microstructure alterations were detected just at the EUROFER97/V interface. A very hard layer assumed to be a σ phase with a thickness of about 4 μm was found on the EUROFER97’s side along the bond interface. A 6 μm carbide layer containing V2C with also a high hardness value was identified on the V interlayer’s side. The impact toughness of the bonded specimens was low, however comparable to that of tungsten especially if the specimens were tested at RT. Tensile test at 550 °C showed a relatively high tensile strength of bonded specimens, which achieved about 50% of the tensile strength of EUROFER97.