Title of article :
Swelling and stacking fault formation in helium implanted SiC
Author/Authors :
Barbot، نويسنده , , J.F. and Beaufort، نويسنده , , M.F. and Texier، نويسنده , , M. and Tromas، نويسنده , , C.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2011
Pages :
4
From page :
162
To page :
165
Abstract :
Effects of annealing on surface swelling in helium implanted 4H–SiC were studied for different implant conditions. The significant increase of surface swelling observed upon high temperature annealing of samples implanted under severe implant conditions (high temperature and fluence) is observed to be concomitant with the growth of cavities and the formation of other extended defects in the highly damaged zone. Frank loops resulting from the drift of interstitials only form in the highly damaged zone. These loops promote the formation of Shockley partial dislocations leading to stacking fault pile-up. For less severe conditions of implantation, low temperature and fluence, the formation of dislocations is avoided upon post-annealing, and the recovery of swelling progressively occurs. Under intermediate conditions of implantation, the compensation between elastic recovery of the implantation-induced strain and the limited formation of cavities and interstitial-type clusters result in a constant swelling.
Journal title :
Journal of Nuclear Materials
Serial Year :
2011
Journal title :
Journal of Nuclear Materials
Record number :
1362523
Link To Document :
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