• Title of article

    Interaction of H2 with strained rings at the silica surface from ab initio calculations

  • Author/Authors

    Lopez، نويسنده , , Nuria and Vitiello، نويسنده , , Mirko and Illas، نويسنده , , Francesc and Pacchioni، نويسنده , , Gianfranco، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2000
  • Pages
    8
  • From page
    56
  • To page
    63
  • Abstract
    The interaction of H2 with two-, three-, and four-member rings at the SiO2 surface has been studied by means of gradient-corrected Density Functional Theory calculations and cluster models. The mechanism of hydrogen dissociation, the energy of reactants and products, and the corresponding activation energies and transition states have been determined as a function of the angular strain and the bond strain in the rings. Only two-member ring structures give an exothermic addition of H2 to the Si–O bonds with formation of Si–H and O–H groups. The corresponding energy barrier, however, is relatively high. A similar result is obtained when the Si–O bonds are strained by about 4% with respect to their equilibrium position.
  • Journal title
    Journal of Non-Crystalline Solids
  • Serial Year
    2000
  • Journal title
    Journal of Non-Crystalline Solids
  • Record number

    1363208