Title of article :
Effects of MeV energy titanium ion implants on the oxygen related defects centers in silica
Author/Authors :
Magruder III، نويسنده , , R.H and Weller، نويسنده , , R.A and Weeks، نويسنده , , R.A and Zuhr، نويسنده , , R.A and Hensley، نويسنده , , D.K، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Pages :
7
From page :
282
To page :
288
Abstract :
Silica samples were implanted with 4 MeV Ti2+ ions at nominal doses ranging from 0.1 to 5.0×1015 cm−2. Optical absorption was measured from 3.5 to 6.5 eV and in all spectra a local maximum at 5.0 eV and a shoulder at 5.9 eV were observed. A second series of samples was implanted with 4 MeV Si2+ ions at nominal doses ranging from 0.5 to 3.0×1015 cm−2. Based on the literature we assumed that Gaussian bands at 4.8, 5.01, 5.17, 5.88, and 7.15 eV comprised the observed spectra. Using Gaussian functions as basis states, linear fits to the data were performed yielding amplitudes for each band. Between 3.5 and 5.5 eV the fits were within ±3%. At larger energies the fits were unsatisfactory. Non-linear fits with an additional, fully adjustable Gaussian function yielded a band at 6.4 eV with full width at half maximum ∼0.5 eV and reduced the difference between the fit and the data to <2% over the full range of the measurements.
Journal title :
Journal of Non-Crystalline Solids
Serial Year :
2000
Journal title :
Journal of Non-Crystalline Solids
Record number :
1363327
Link To Document :
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