Pulsed laser crystallization and doping for thin film transistors

Pulsed excimer-laser processing of amorphous silicon on non-crystalline substrates allows the creation of new materials and devices. In this paper, we review (1) fabrication of polysilicon thin film transistors (TFTs) on glass substrates, (2) integration of polysilicon and amorphous silicon devices on the same glass substrate and (3) formation of self-aligned contacts for amorphous silicon thin-film transistors via laser doping.