Author/Authors :
Daghighi، Arash نويسنده Assistant Professor, Faculty of Engineering, Shahrekord University, Shahrekord, Iran , , Rafiei، Hassan نويسنده Graduate Student, Department of Electrical Engineering, Majlesi Branch, Islamic Azad University, Isfahan ,
Abstract :
In this paper for the first time, a circuit model for multi-finger I-gate body-contacted silicon-on-insulator MOSFET is presented. The model parameters are adjusted using simulation of a 45 nm SOI nMOSFET. Using the model, typical body voltage for a 35 finger device is obtained and applied to the transistor. The threshold voltage and drain current are obtained for the first transistor and center ones in the multi-finger structure. The drain induced barrier lowering of the center transistor is increased by 30% and off-current 40 times than that of the first transistor. Simulation results verified the I-gate body contact model in lack of controlling the body voltage comparing with the conventional body contacts e.g. H-gate.
