Simultaneous irradiation of tungsten with deuterium and carbon at elevated temperatures

The dynamics of W sputtering as well as the accumulation of implanted C for W layers deposited on Ni substrates under simultaneous 12 keV C 2 - and 9 keV D 3 + ion irradiation was studied in-situ by ion beam analysis using 2.5 MeV 3 He + ions. Specifically, the change in the W and C areal densities as a function of the C fraction in the incident total flux (ƒC) and temperature (400–600 °C) is discussed. C-only irradiation leads to increased C self-sputtering with increasing temperature. Simultaneous irradiations at RT indicate contributions of chemical erosion in the W sputtering regime, which are not observed at elevated temperatures. The increased C self-sputtering dominates the implantation sputtering behavior at elevated temperatures, shifting the transition point between continuous W sputtering and continuous C layer growth to higher ƒC. The effect of D is observable only with the onset of C layer buildup, but chemical erosion by D could not be distinguished from kinematic effects in the C deposition regime.