Title of article
Influence of irradiation-induced defects on fracture behavior in highly pure SiC
Author/Authors
Park، نويسنده , , K.H. and Hinoki، نويسنده , , T. and Kohyama، نويسنده , , A.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2007
Pages
5
From page
703
To page
707
Abstract
Charged-particle irradiation to highly pure SiC was performed to investigate the influence of irradiation-induced defects on its fracture behavior. To investigate the fracture behavior of SiC, the microstructural analysis was carried out by observing cross-sections of a residual indentation impression. An apparent increase of indentation fracture toughness was shown in the highly pure SiC upon ion irradiation. In the case of ion-irradiated SiC, a number of micro-cracks were created around the indentation-induced deformation region. Indentation-induced slip bands on the (1 1 1) crystallographic plane were observed in both the virgin and the ion-irradiated SiC. The indentation-induced slip bands and the pre-existing defects provided one of the sites for micro-crack creation for the ion-irradiated SiC. The formation of the micro-cracks may dissipate the fracture energy for brittle fracture, which seems to be one of the mechanisms for the toughening behaviors of SiC by an energetic particle irradiation.
Journal title
Journal of Nuclear Materials
Serial Year
2007
Journal title
Journal of Nuclear Materials
Record number
1365581
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