• Title of article

    Comparison of the damage in sapphire due to implantation of boron, nitrogen, and iron

  • Author/Authors

    L. R. McHargue، نويسنده , , Carl J. and Alves، نويسنده , , E. Pereira Marques Filho، نويسنده , , C. and Ononye، نويسنده , , L.C.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2009
  • Pages
    6
  • From page
    311
  • To page
    316
  • Abstract
    The damage microstructure and optical properties of sapphire implanted with boron, nitrogen and iron were examined by RBS-C, TEM, and optical absorption. Implantations were conducted at RT and 1000 °C at 150 keV and fluences of 3 × 1016–1 × 1017 ions/cm2. Optical absorption measurements indicate that the boron-implanted samples contained the highest number of F-type centers and the nitrogen-implanted samples the fewest. The microstructure of the boron-implanted samples shows only ‘black-spot’ defect clusters, as did the iron-implanted samples at the lower fluences. At higher fluences, the iron implanted samples revealed the presence of nanometer-sized precipitates of single crystal bcc iron that contributed to additional optical scattering. Bubbles formed in samples implanted with low fluences of nitrogen. A second damage region is apparent in the RBS-C patterns for higher fluences of nitrogen.
  • Journal title
    Journal of Nuclear Materials
  • Serial Year
    2009
  • Journal title
    Journal of Nuclear Materials
  • Record number

    1366515