In situ studies of ion irradiated inverse spinel compound magnesium stannate (Mg2SnO4)

Magnesium stannate spinel (Mg2SnO4) was synthesized through conventional solid state processing and then irradiated with 1.0 MeV Kr2+ ions at low temperatures 50 and 150 K. Structural evolutions during irradiation were monitored and recorded through bright field images and selected-area electron diffraction patterns using in situ transmission electron microscopy. The amorphization of Mg2SnO4 was achieved at an ion dose of 5 × 1019 Kr ions/m2 at 50 K and 1020 Kr ions/m2 at 150 K, which is equivalent to an atomic displacement damage of 5.5 and 11.0 dpa, respectively. The spinel crystal structure was thermally recovered at room temperature from the amorphous phase caused by irradiation at 50 K. The calculated electronic and nuclear stopping powers suggest that the radiation damage caused by 1 MeV Kr2+ ions in Mg2SnO4 is mainly due to atomic displacement induced defect accumulation. The radiation tolerance of Mg2SnO4 was finally compared with normal spinel MgAl2O4.