Rapid crystallization of silicon films using pulsed current-induced joule heating

Crystallization of silicon films formed on glass substrates was achieved by rapid-joule heating of Cr strips adjacently formed via 200-nm-thick SiO2 intermediate layers. 3-μs-pulsed voltages applied to the Cr strips caused a high joule heating intensity about 1×106 W/cm2. Transmission electron microscopy measurements confirmed a crystalline grain size of 50–100 nm. 1-μm-long crystalline grain growth was observed just beneath of the edge of Cr strips. The activation of phosphorus atoms according to crystallization was also achieved.