Low frequency Raman scattering of amorphous Ge1−xSx (0⩽x⩽0.62)

Amorphous Ge1−xSx (0.0⩽x⩽0.62) films were prepared by a laser ablation method, and their low frequency Raman scattering spectra were measured at 20 K. Two distinct vibration regimes were observed in the spectra. In the regime at higher frequencies, the power-law dependence of the reduced Raman intensity (I∝ωt) changes with an increase in x for x>0.2 in such a way that t increases from 1.4 to 1.7 as x increases from 0.2 to 0.62. By applying a fracton model, the fractal dimension is found to decrease with an increase in x over the range 0.2⩽x⩽0.62.