Title of article :
Efficiency of interface trap generation under hole injections in 2.1 nm thick gate-oxide P-MOSFETs
Author/Authors :
Bravaix، نويسنده , , Alain and Goguenheim، نويسنده , , Didier and Revil، نويسنده , , Nathalie and Rubaldo، نويسنده , , Laurent and Vincent، نويسنده , , Emmanuel، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
8
From page :
139
To page :
146
Abstract :
Carrier injection mechanisms have been compared in surface p-channel metal–oxide–semiconductor field-effect transistors with a 2.1 nm thick gate-oxide. Currents as a function of voltage, I(V), were correlated with a corrected charge-pumping analysis taking into account the tunneling components. Channel hot-hole injection at the gate and drain voltages, |VGS|⩾|VDS|, induces damage even at low stress voltage (<1.5 V) in contrast to hot-electron injection which requires much larger field conditions close to the drain avalanche hot electron regime. Hot-hole injection is much efficient for the generation of donor-type interface traps, ΔNit, than the uniform (direct) tunneling of holes from the inversion layer. No trapping of positive charge has been detected by the charge-pumping analysis for these two last injections in 2.1 nm thick gate-oxide p-devices. The larger reduction of the drain current |IDS| under hot-hole injection differs from the uniform injection by the amount of ΔNit. This is due to the energy supply and to the extent of the degraded region towards the source which in both injection mechanisms do not exhibit a rate-limiting step during the generation of interface traps. These results indicate that the Nit generation cannot be explained by the diffusion of water related species across the gate-oxide but can by explained by the electron–hole recombination process.
Journal title :
Journal of Non-Crystalline Solids
Serial Year :
2003
Journal title :
Journal of Non-Crystalline Solids
Record number :
1368528
Link To Document :
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