Author/Authors :
Pola، نويسنده , , Josef and Tomovsk?، نويسنده , , Radmila and Bakardjieva، نويسنده , , Snejana and Gal??kov?، نويسنده , , Anna and Vacek، نويسنده , , Karel and Gal??k، نويسنده , , Aftanas، نويسنده ,
Abstract :
Megawatt ArF laser-induced photolysis of gaseous trimethyl(vinyloxy)silane (TMVSi) results in chemical vapor deposition of solid nano-sized polyoxocarbosilane that is deduced as formed via agglomeration of SiCHnO species (n⩽3). The laser fabricated polymer shows superior thermal stability, contains radical Si centers and is described as a cross-linked polymethyloxocarbosilane consisting of CnSiO4−n (n=0–3) configurations.