Author/Authors :
Bresler، نويسنده , , M.S. and Gusev، نويسنده , , O.B. and Terukov، نويسنده , , E.I. and Fuhs، نويسنده , , W. and Froitzheim، نويسنده , , A. and Gudovskikh، نويسنده , , A.S. and Kleider، نويسنده , , J.P. and Weiser، نويسنده , , G.، نويسنده ,
Abstract :
The light emission from heterostructures of hydrogenated amorphous silicon and monocrystalline silicon of the type a-Si:H(n+)/c-Si(p) under forward bias has been studied. From non-optimized solar cell structures silicon band edge emission at 1.085 eV is obtained with an external power conversion efficiency of ηext=0.013% at 300 K. Treating the heterostructure as a one-sided n–p junction the internal conversion efficiency is estimated to be ηi≈0.3%. It is argued that such heterostructures can be optimized by improvement of the optical confinement, reduction of interface recombination and enhancement of the non-radiative lifetime of the wafer material.
