Light-induced effects on low energy photoluminescence in a-Si:H investigated by frequency-resolved spectroscopy

Light-induced effects on the intensity and lifetime distribution of low energy photoluminescence (PL) in a-Si:H films and their temperature variation have been studied. The origin of the low energy PL is discussed in terms of a model of T3+–N2− pairs. The change in the temperature variation of the PL intensity caused by the illumination is discussed by considering an additional thermal excitation process followed by non-radiative recombination.