Author/Authors :
Niehus، نويسنده , , M. and Sanguino، نويسنده , , P. and Schwarz، نويسنده , , R. and Fedorov، نويسنده , , A. and Martinho، نويسنده , , J.M.G. and Soares، نويسنده , , M.J. and Monteiro، نويسنده , , T. and Wünsch، نويسنده , , F. and Kunst، نويسنده , , M.، نويسنده ,
Abstract :
We have applied short laser pulses with a minimal pulse width of 5 ps to study the non-radiative and radiative carrier density decay in polycrystalline GaN. The GaN films are deposited by a cyclic pulsed laser deposition (PLD) technique at a relatively low substrate temperature of 600 °C on sapphire substrates. Results from photoluminescence decay and transient photocurrents are compared with respect to trapping, recombination, and transport of photogenerated carriers in polycrystalline GaN thin films.
