Author/Authors :
Liu، نويسنده , , Qiming and Lu، نويسنده , , Bing and Zhao، نويسنده , , XiuJian and Gan، نويسنده , , Fuxi and Mi، نويسنده , , Jun-Min Qian، نويسنده , , Shixiong، نويسنده ,
Abstract :
The real and imaginary parts of third-order susceptibility of amorphous GeSe2 film were measured by the method of the femtosecond optical heterodyne detection of optical Kerr effect at 805 nm with the 80 fs ultra fast pulses. The results indicated that the values of real and imaginary parts were 8.8 × 10−12 esu and −3.0 × 10−12 esu, respectively. An amorphous GeSe2 film also showed a very fast response within 200 fs. The ultra fast response and large third-order non-linearity are attributed to the ultra fast distortion of the electron orbits surrounding the average positions of the nucleus of Ge and Se atoms.