UV laser-induced photolysis of 1,3-disilacyclobutane in oxygen for chemical vapour deposition of nano-sized polyoxocarbosilane films

The multi-pulse ArF laser irradiation into gaseous 1,3-disilacyclobutane–O2 mixture in excess of buffer gas occurs as non-explosive chemical vapour deposition of solid methylsilicone films, whereas the single-pulse irradiation into the gaseous mixture in the absence of buffer gas results in explosive chemical vapour deposition of solid nano-structured polyoxocarbosilanes poor in hydrogen.