Author/Authors :
Peter P. Gaspar، نويسنده , , Manchao Xiao، نويسنده , , Dong Ho Pae، نويسنده , , Daniel J. Berger، نويسنده , , Tesfamichael Haile، نويسنده , , Tongqian Chen، نويسنده , , Deqing Lei، نويسنده , , William R. Winchester، نويسنده , , Ping Jiang، نويسنده ,
Abstract :
The scarcity of triplet silylenes compared with triplet carbenes can be understood in terms of the sizes of the valence orbitals. The larger size of the silicon orbitals leads to a decrease in the repulsion of the nonbonding electrons in the singlet state and hence their energy-lowering separation in the triplet state is less capable of compensating an attendant promotion energy. Calculations suggested that the effect of bulky substituents must be supplemented by a reduction of their electronegativity in order to reduce the promotion energy to the point that a triplet ground state can be achieved at an attainable bond angle. The culmination of this approach has been the generation of a silylene (t-Bu)3SiSiSi(iPr)3 that appears to react from its triplet ground state.
Keywords :
Triplet ground state , Photochemistry , Reaction mechanisms , Organosilicon chemistry , Silylene