Characterization of exciton self-trapping in amorphous silica

Triplet electron–hole excitations were introduced into amorphous silica to study self-trapping (localization) and damage formation using density functional theory. Multiple self-trapped exciton (STE) states are found that can be differentiated based on the luminescence energy, the localization and distribution of the excess spin density of the triplet state, and relevant structural data, including the presence or absence of broken bonds. The trapping is shown to be affected by the relaxation response of the silica network, and by comparing results of quartz and amorphous silica systems the effects of the inherent disordered structures on exciton self-trapping are revealed. A key result is that the process of exciton trapping can lead directly to the formation of point defects, without thermal activation. The proposed mechanism includes a non-radiative decay from the excited to the ground state followed by structure relaxation to a defect configuration in the ground state.