Obtaining ZnO/CIS heterostructures

ZnO/CuInSe2 heterostructures were obtained by sequential evaporation of elements. Firstly, a layer of Zn was deposited on the glass substrate by the magnetron sputtering method in vacuum. Needle-shaped nanostructures of ZnO were grown from the prepared Zn films by thermal annealing in the air. Secondly, Se, In and Cu layers were sequentially deposited onto these structures. The obtained samples were then annealed at 400 °C to form the CuInSe2 (CIS) compound. The morphology, composition and phase identification were obtained using the scanning electron microscopy, energy-dispersive X-ray spectroscopy, and X-ray diffraction analysis methods.