Ion conductive chalcohalide glasses in LiI–Ga2S3–GeS2 system

The electric properties of LiI containing chalcohalide glasses in the system Ga2S3–GeS2 were studied by means of impedance spectroscopy and potentiostatic chronoamperometry. Two sets of the samples were prepared by direct synthesis from elements and compounds in evacuated quartz ampoules. The prepared glasses were as follows: xLiI–xGa2S3–(100−2x)GeS2, x = 15, 20, 25 and 20LiI–xGa2S3–(80−x)GeS2, x = 0, 5, 10, 15 and 20. In the first set the concentration of LiI increased and the second set was prepared to study the influence of Ga2S3 on the properties of the glasses. Additional aim of this work was to compare the electric properties of LiI containing Ga2S3–GeS2 glasses with analogous AgI containing Ga2S3–GeS2 glasses recently studied by us. The conductivity of the LiI containing glasses in the Ga2S3–GeS2 system was higher and the activation energy was lower than in the analogous AgI containing system. The residual electronic (hole) conductivity remained similar in both systems being almost negligibly low. Raman spectroscopy proved the influence of LiI as well as Ga2S3 on glass structure, however interpretation of Raman spectra of these glasses is complicated due to small mass difference between gallium and germanium.