Author/Authors :
Dong، نويسنده , , Guoping and Zhang، نويسنده , , Liaolin and Peng، نويسنده , , Mingying and Qiu، نويسنده , , Jianrong and Lin، نويسنده , , Geng-Geng Luo، نويسنده , , Fangfang and Qian، نويسنده , , Bin and Zhao، نويسنده , , Quanzhong، نويسنده ,
Abstract :
With the irradiation by femtosecond (fs) laser with high repetition rate, GeS2 micro/nano-crystalline formation and microstructural modification occurred in pseudo-binary GeS2–In2S3 glass, while almost no similar change was observed in GeS2 glass. The addition of In2S3 is beneficial for the precipitation of GeS2 micro/nano-crystals. It is expected that functional micro/nano-crystals can be controllably prepared in chalcogenide glasses by fs laser irradiation through glass composition design.
Keywords :
Femtosecond laser , Chalcogenide glass , Microstructural modification , raman spectrum
