Porous silicon grains in SiO2 matrix: Ultrafast photoluminescence and optical gain

We search for the presence of stimulated emission in samples of porous silicon embedded in the sol–gel derived SiO2 matrix. By modifying the etching conditions of the porous silicon using hydrogen peroxide, we decrease substantially the nanocrystal size and produce a significant blue shift of the PL emission. Femtosecond variable-stripe length experiments combined with the shifting-excited spot technique demonstrates positive optical gain (modal gain ∼25 cm−1) in the range 550–730 nm. Ultrafast photoluminescence dynamics indicates the origin of the stimulated emission as possibly due to recombination of excitonic states inside silicon nanocrystals.