Enhancement of photoluminescence in SiCxNy nanoparticle films by addition of a Ni buffer layer

This work reports the effect of the presence of a Ni buffer layer on the photoluminescence (PL) of SiCxNy nanoparticle films prepared by RF plasma magnetron sputtering process in a reactive N2 + Ar + H2 gas mixture. An introduction of a Ni buffer of 80 nm or thicker remarkably improves the PL of the films. Annealing in a temperature range of 400–1100 °C is found to significantly affect the PL intensity. Optimal PL is achievable at 600 °C. X-ray photoelectron and Fourier-transform infrared spectroscopy suggest that the strong PL is directly related to the composition of the SiCxNy nanoparticle and the concentration of Si–O, and Si–N bonds. The results are relevant to the development of wide bandgap optoelectronic devices.