Impact of stress on Fowler–Nordheim parameters effects on EEPROM threshold voltage

In this paper we propose a new way of studying stress effects on non-volatile memory cells. First, Fowler–Nordheim (FN) current will particularly be measured after setting up a new non-stressing I(V) measurement method, using pulse voltage instead of conventional sweep measurements. A comparison with cell array stress test (CAST) measurements will then be made. Secondly, we propose a simulation of the programming window, based on FN parameters extracted from these curves, showing its closure with write/erase (W/E) operations.