Electronic mechanism of thermal destruction of radiation-induced Eʹ-centers in crystalline and glassy SiO2

The thermal decay regularities for radiation-induced Eʹ-centers in crystalline and glassy SiO2 were investigated. The results obtained point out that the destruction of Eʹ-centers can be described as ionization process of deep centers in electric field. In terms of used model, the electric field and electron–vibration coupling parameters are sensitive to structural disorder. The most weak electron–phonon coupling in Eʹ-centers is observed for amorphous systems.