Mechanisms controlling primary crystallisation of Ga20Te80 glasses

The kinetic study of the crystallisation process of Ga20Te80 glass from isothermal and continuous heating calorimetric data have been performed applying a recently developed procedure. The kinetic information was complemented with X-ray diffraction measurements. With this scope, three crystallisation patterns, with three-dimensional isotropic growth have been analysed: (i) site saturation and interface controlled growth. (ii) homogeneous nucleation with interface controlled growth and (iii) homogeneous nucleation with two simultaneous modes of crystal growth (interface- and diffusion-controlled). A complex model with two simultaneous modes of three-dimensional isotropic crystal growth with decreasing homogeneous nucleation and soft impingement has been applied for modelling primary crystallisation of the Ga20Te80 glass. The model goes beyond the isokinetic hypothesis when coupling isothermal and continuous heating kinetic data. The apparent activation energy Ea = (2.06 ± 0.03) eV/at obtained for the primary crystallisation of the phase Te is shown to correspond to an activation energy for nucleation EI = (2.85 ± 0.03) eV/at and an interface controlled activation energy for growth Eu = (1.90 ± 0.03) eV/at at the crystallisation onset.